Dzyaloshinskii-Moriya interaction at epitaxial ferromagnet/semiconductor interface

We report a sizable Dzyaloshinskii-Moriya interaction (DMI) originating at an epitaxial Fe3Si/Ge interface. Using spin-wave spectroscopy, we show that the magnitude of the interfacial DMI of the Heuslerferromagnet/semiconductor hybrid structure is comparable to that of ferromagnet/Pt structures, despite the absence of heavy elements. We find that the observed DMI at the Fe3Si/Ge interface is consistent with the prediction of an antisymmetric exchange interaction induced by the interfacial Bychkov-Rashba spin-orbit interaction. These results demonstrate that ferromagnet/semiconductor hybrid structures are a promising class of systems for chiral spintronics.