An Ultra-High Transparent Electrode via a Unique Micro-Patterned AgNWs Crossing-Network with 3.9% Coverage: Toward Highly-Transparent Flexible QLEDs

Micro-patterning silver nanowires (AgNWs) via solution processes is vital in making high-performance transparent flexible electrodes (TFE) that have been widely used in optoelectronic devices. However, it has suffered from the limitation of a trade-off relationship between the coverage and the arrangement of AgNWs, which determine the transparency and the conductivity, respectively. Here, unique AgNWs micro-patterns, featuring as the crossing-grid of high-resolution and highly-aligned AgNWs micro-lines, which enable the micro-pattern highly cross-aligned with a limited 3.9% coverage, are developed. Consequently, a TFE with an ultra-high transmittance over 98.5% and a sheet resistance of 25.5 omega sq-1 is developed. Guided by the unit of triple conical fibers, AgNWs are controllable transferred onto the target area, leaving a line with a width-resolution up to 2 mu m. Simultaneously, AgNWs are aligned under the synergistic effect of both the solution-shearing and the tri-phase contact line confinement. Using the as-developed TFE as either the top or the bottom electrode, a transparent quantum dot light-emitting diode (T-QLED) with a transmittance of 89.8%, as well as a flexible T-QLED with a transmittance of 92.8% are demonstrated, much higher than those of T-QLEDs reported. It is envisioned that the result would inspire the fabrication of high-performance transparent optoelectronic devices. Unique silver nanowires (AgNWs) micro-patterns, featured as the crossing-grid of high-resolution and highly-aligned AgNWs micro-lines, which enables the micro-patterns highly cross-aligned with a very limited 3.9% coverage, are developed. Consequently, the ultra-high transparent flexible electrode with a transmittance up to 98.5% is developed, which is applicable for building high-performance flexible transparent quantum dot light-emitting diodes.image