Improvement of metal-insulator transition and mechanical strength of RENiO₃ by co-sintering

Rare-earth nickelates (RENiO3: RE not equal La) exhibit metal-insulator transition (MIT) properties that enable potential applications, such as critical temperature resistance thermistors, optoelectronic switches, and correlated logical devices. Nevertheless, their abrupt structural distortion across MIT results in mechanical stresses and forms microcracks within the bulk RENiO3, and this irreversibly reduces their resistive change during MIT that further impedes their practical applications. Herein, we demonstrate a compositing strategy that simultaneously improves the MIT performances and mechanical strength of RENiO3 by introducing a secondary phase of perovskite oxides with similar lattice parameters and high resistivity. Despite its much higher resistivity compared to RENiO3 (e.g., RE = Sm or Pr), introducing the LaMnO3 compositing phase under high oxygen pressure surprisingly reduces the matrix resistivity. Furthermore, such a compositing process (e.g., 20% LaMnO3) also effectively improves the mechanical strength of RENiO3 by eight times. Such counterintuitive variations are attributed to the similar structure and lattice parameter between RENiO3 and the perovskite composites that modify the grain boundary. As a result, the resistive change is more abrupt across MIT owing to the reduction in the resistivity associated with the grain boundary, while the defect generation and propagation are also suppressed that improves the mechanical properties. This further pave the way to the application of bulk RENiO3 as discrete devices in correlated electronics.