Short-wave infrared sensitive broadband photodetectors based on an HgTe quantum dot film

Broadband photodetectors capable of detecting light across a wide spectrum ranging from visible to short wave infrared (SWIR) wavelengths have significant relevance in various fields, including space technology and civil applications. HgTe quantum dots (QDs) have emerged as a promising candidate for the development of low-cost broadband photodetectors. In this study, a photodetector based on a layered structure of indium tin oxide (ITO)/HgTe QD film/gold (Au) was designed and fabricated using a layer-by-layer spin coating method. The fabricated photodetector exhibited a broadband response from 400 nm to 2000 nm, covering the visible and SWIR regions. Its broad spectral range makes it suitable for a wide range of applications. Additionally, the photodetector demonstrated a fast response time of approximately 300 mu s, enabling rapid detection and data acquisition. These results highlight the potential of HgTe QDs as a promising material for the development of advanced broadband photodetectors with fast response times. The simplicity of the device structure, combined with the low-cost fabrication technique, makes it an attractive option for commercialization and integration into various optoelectronic systems. HgTe CQDs with tailored shapes (tetrapods, triangles, and distorted parallelograms) were successfully synthesized and employed to create vertical-structured broadband photodetectors.