Algorithm for Calibrating Effective Mass Parameters to consider Quantum Confinement Effects in Ultra-Thin-Body Devices for Various Temperatures

In ultra-thin-body (UTB) MOS devices, the downscaling of the channel length is made possible through the reduction of the channel thickness and oxide thickness, which in turn results in an increasing impact of quantum confinement effects (QCEs) on channel electrostatics, including the integrated electron charge density within the channel. In this work, we present an approach to enable the computationally efficient k.p method-based effective mass approximation (EMA) to consider the effects of quantum confinement while also being able to extend this approach to a wide range of device temperatures for a UTB double-gate (DG) MOS device. In this context, we propose an algorithm to calibrate the effective masses through detailed benchmarking of the eigen energies and integrated electron densities obtained from EMA with results from the band structure-based approach, showing the applicability of this approach to accurately consider QCEs for a wide range of device temperatures (from 15 K to 300 K) and silicon-on-insulator (SOI) channel thicknesses.