Anomalous Nernst effect and topological Nernst effect in the ferrimagnetic nodal-line semiconductor Mn3Si2Te6

In the ferrimagnetic nodal-line semiconductor Mn3Si2Te6, colossal magnetoresistance (CMR) arises below Tc = 78 K due to the interplay of magnetism and topological nodal-line electronic structures. Here, we present electrical and thermoelectric transport properties of Mn3Si2Te6. Below Tc, the Nernst signal is dominated by anomalous Nernst effect (ANE) in the high-field region above 3 T. The scaling ratio between the ANE and magnetization is comparable to that in conventional magnetic materials, suggesting minor contributions from the nodal-line structure. In the low-field region (0 -3 T) where the CMR is most apparent, possible signatures of topological Nernst effect (TNE) are found, which are likely associated with the noncollinear magnetic structure.