In situ IV and CV characterization of Pt/n-GaN Schottky barrier diodes irradiated by 100 MeV oxygen ions

Pt/n-GaN Schottky diodes were fabricated on metal organic chemical vapor deposition grown epitaxial GaN thin films. Temperature-dependent electrical characterizations current–voltage and capacitance–voltage were performed in the temperature range of 80–500 K. Barrier inhomogeneity calculations of the pristine Schottky barrier diodes were performed. Furthermore, these devices were irradiated with 100 MeV oxygen ions in fluencies ranging from 10 10 to 10 14 ions/cm 2 . In situ current–voltage and capacitance–voltage measurements were performed after each fluence. The Schottky barrier height and ideality factor increased, whereas the carrier concentrations decreased with an increase in the ion fluence. The results were interpreted based on the thermionic emission model and energy loss mechanism of the ion beam in GaN.