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Impact of Etching Process on Al2O3/GaN Interface for MOSc-HEMT Devices Combining ToF-SIMS, HAXPES and AFM

Tarek Spelta,Marc Veillerot,Eugenie Martinez,Denis Mariolle,Roselyne Templier,Nicolas Chevalier,Pedro Fernandes Paes Pinto Rocha,Bassem Salem,Laura Vauche,Berangere Hyot

SOLID-STATE ELECTRONICS（2023）

Cited 1|Views2
Key words
GaN stoichiometry,MOSc-HEMT,Etching,SIMS,HAXPES
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