Synthesis, structural features, and optical limiting application of silicon carbide nanoflakes

Silicon carbide (SiC) is a significant semiconductor candidate for the third generation which possesses excellent chemical and physical characteristics. We report the synthesis, structural characterization, and Nonlinear optical properties of SiC nanoflakes. The nanoflakes were synthesized using silicon cut waste by solution combustion technique. The scanning electron microscopic images confirm the formation of nanoflake structures. X-ray diffraction peaks confirm the crystallinity in SiC nanoflakes. The Raman spectroscopy studies confirm the existence of two prominent peaks at 790 cm −1 and 970 cm −1 of SiC. The UV–visible spectrum exhibits a characteristic absorption peak of SiC. The nonlinear optical absorption characteristics of the SiC nanoflakes were analyzed by open aperture Z-scan technique using a 532 nm continuous-wave laser. The z-scan result indicates the significant nonlinear absorption with a nonlinear coefficient of 21.25 × 10 –3 cm/W. Nanoflakes exhibit better optical limiting with a limiting threshold of 40 W/cm 2 . The optical limiting property indicates the suitability of SiC nanoflakes in eye and sensor protection applications.