High-speed growth of thick high-purity -Ga₂O₃ layers by low-pressure hot-wall metalorganic vapor phase epitaxy

High-speed growth of thick, high-purity beta-Ga2O3 homoepitaxial layers on (010) beta-Ga2O3 substrates by low-pressure hot-wall metalorganic vapor phase epitaxy was investigated using trimethylgallium (TMGa) as the Ga precursor. When the reactor pressure was 2.4-3.4 kPa, the growth temperature was 1000 degrees C, and a high input VI/III (O/Ga) ratio was used, the growth rate of beta-Ga2O3 could be increased linearly by increasing the TMGa supply rate. A thick layer was grown at a growth rate of 16.2 mu m h(-1) without twinning. Incorporated impurities were not detected, irrespective of the growth rate, demonstrating the promising nature of beta-Ga2O3 growth using TMGa.