Layered Semiconductor Cr_0.32Ga_0.68Te₂.₃₃ with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate (vol 145, pg 4683, 2023)

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY（2023）

Cited 0|Views28

No score

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined

Layered Semiconductor Cr0.32Ga0.68Te2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate (vol 145, pg 4683, 2023)