Large Wafer GaN on Silicon Reconstitution with Gold-to-Gold Thermocompression Bonding

III-V semiconductors such as GaN and InP are attractive materials for RF and power electronics. However, wafer/substrate choice depends on factors like wafer size, quality, thermal performance, lattice mismatch, and cost. Larger wafer diameters (200 mm and 300 mm) allow for compatibility with state-of-the-art silicon equipment but are difficult grow natively. In this paper, a technique is developed to reconstitute GaN/(111) Si dielets onto a large diameter (100) silicon handler using a thin gold interfacial layer. The dielets are thermocompression bonded to the large diameter (100) silicon substrate. The (111) silicon is then removed by etching. The inter-dielet gap is passivated and filled with deposited oxide, resulting in a planar substrate. To the authors' knowledge, this is the first work that demonstrates a large-size III-V substrate fabricated by heterogeneous integration and thermocompression bonding.