VNWFET-based technology: from device modelling to standard cell library

2023 IEEE 23RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, NANO(2023)

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摘要
Vertical Nanowire Field Effect Transistors (VNWFETs) are an emerging technology with significant potential to reduce footprint and consequently interconnect capacitance, thereby achieving improved energy-efficiency and being naturally compatible with advanced 3D integration approaches. However, while initial estimations have focused on projections and estimations, no work has so far used a detailed compact model to attempt accurate transistor-level simulations for standard cell library characterization thus enabling logic synthesis. In this paper, we propose a design flow to make the link from an existing (laboratory-scale) VNWFET technology and the associated compact model, to standard static logic cell design and characterization, and ultimately logic synthesis. To the best of our knowledge, this is the first work to prove the possibility of such a realistic design flow tailored to VNWFET technologies.
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关键词
Vertical Nanowires, Emerging Technology, Device Modelling, Standard Cell Library, Electrical Simulations, Logic Synthesis
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