Study of silicon-oxide RRAM devices based on complex impedance spectroscopy

Piotr Wiśniewski,Andrzej Mazurak,Jakub Jasiński,Romuald B. Beck

Solid-State Electronics（2023）

引用 0|浏览7

暂无评分

摘要

•MIS-type RRAM devices with SiO2 exhibit various conductance levels depending on the reset voltage value.•Complex impedance spectroscopy supported by modeling may be used to investigate RRAM devices.•An equivalent electrical circuit model may be used to analyze the resistive switching effect in the devices.

查看译文

关键词

rram devices,complex impedance spectroscopy,silicon-oxide

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要