Enabling RF Circuit Techniques for 5G and beyond

Florinel Balteanu, Kiran Thoomu, Ashish Pingale, Sruthi Venimadhavan, Saunak Sarkar,Yunyoung Choi,Hardik Modi,Serge Drogi,Junhyung Lee,Bipul Agarwal

2023 53RD EUROPEAN MICROWAVE CONFERENCE, EUMC（2023）

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Abstract

Worldwide adoption of 5G mobile devices has been one of the main driving engines behind semiconductor industry. Since the initial release in 2020, 5G enabled devices surpassed the penetration of 3G/4G smartphones. 5G brings higher data capacity, low latency, and new applications. These are possible due to lower feature nodes such as FinFET 3nm/5nm but also due to improvements of the 5G RF front end modules. This paper presents 5G RF front end architectures with novel circuits and measurement details which will be part of future 5G+ mobile devices and beyond.

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Key words

fifth/sixth generation wireless (5G/6G),power amplifier (PA),load modulation,RF front end (RFFE),silicon on insulator (SOI),gallium arsenide (GaAs),complementary metal oxide semiconductor (CMOS),FinFET,envelope tracking (ET),film bulk acoustic resonator (FBAR),digital signal processing (DSP),power management integrated circuit (PMIC)

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