Cycle-to-cycle variability analysis of Ti/Al₂O₃-based memristors

In this work, an experimental analysis of the resistive switching behavior of TiN/Ti/Al2O3/W memristors is presented. The main focus is on the analysis of the variability of the key parameters during long series of cycles, using both sweep and pulsed voltage measurement sequences. In addition, the correlation of the resistive switching parameters between subsequent cycles has been investigated. The results demonstrate that memristors based on Ti/Al2O3 exhibit a low cycle-to-cycle variability between consecutive cycles, indicating their potential use for emerging applications.