A 23-32 GHz LNA with Near 5 W Power Handling Capability Using 180 nm GaN HEMT Technology

This paper presents a robust 23 - 32 GHz low noise amplifier (LNA) based on 180 nm gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. This two stage LNA exhibits the highest reported power handling capability of at least 4.89 W (36.9 dBm). The LNA also provides competitive noise figure (NF), gain, and an output third order intercept point (OIP3) of 1.62 - 2.03 dB, 9 - 16 dB, and 23.4 - 30.6 dBm, respectively, across the 23 - 32 GHz frequency band. These results provide an excellent example of a robust GaN-based LNA which could enable next generation receiver topologies without the need for radio frequency input limiters.