Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield

•Lines 7-8: Furthermore, state-of-the-art vertical GaN devices including fin-JFETs, CAVETs, and MOSFETs have been reported with blocking voltages up to 1.6 kV [ 4, 5, 6].•Lines 99-101: Consequently, no leakage ramp-up or avalanche behavior was observed. On average, devices only reached 30% of the theoretical blocking voltage before failing. Several factors can reduce the robustness of the gate dielectric such as material defects, non-uniform thickness, and interface roughness. Further associated challenges will be discussed Section 4.•Lines 148-149: It should be noted that initial reports on regrown devices such as fin JFETs are emerging [ 4 ], however, the leakage currents are excessively high compared to traditional commercial offerings.