Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches
IEEE Transactions on Electron Devices(2023)
Abstract
This article analyses the introduction of airgaps in the interconnect network of silicon-on-insulator (SOI)-CMOS-based RF switches to significantly reduce the OFF-state capacitance
${C}_{ \mathrm{\scriptscriptstyle OFF}}$
without degrading the ON-state resistance
${R}_{ \mathrm{\scriptscriptstyle ON}}$
. Based on the 130-nm node of an existing RF-SOI-CMOS technology, an accurate
${C}_{ \mathrm{\scriptscriptstyle OFF}}$
evaluation is performed by calculating the respective contributions of interconnects and the intrinsic transistor separately. The impact of the relative airgap volume is simulated and results in an ultimate
${C}_{ \mathrm{\scriptscriptstyle OFF}}$
reduction of 24.6% when the intermetal dielectric is completely replaced by air. It is shown that most of the reduction in
${C}_{ \mathrm{\scriptscriptstyle OFF}}$
is achieved by introducing airgap at the first metal level. The airgap approach is verified experimentally by partially eliminating the interconnect dielectric of RF switches in postprocess etching steps. A measured
${C}_{ \mathrm{\scriptscriptstyle OFF}}$
improvement of 21.7 (7.2%) and 18.3 fF/mm (6.3%) is demonstrated for 0.14- and 0.16-
$\mu \text{m}$
gate length transistors, for which the airgap volume is only partial.
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Key words
Airgap,CMOS,OFF-state capacitance,ON-state resistance,RF,RF switches,silicon-on-insulator (SOI)
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