Development of CoZrTaB Laminated Thin Films With Novel CMOS Compatible Dielectric Material
IEEE Transactions on Magnetics(2023)
Abstract
This article presents optimized CoZrTaB-based laminated thin films with a wet etch-able oxide dielectric material. Wet etching capability was studied on the stack material and a narrow and clean undercut was achieved. Good uniaxial anisotropy with low coercivity (<1 Oe) was achieved via in situ magnetic alignment during magnetron sputtering. The relative permeability of 432 and the Q-factor of 23.4 at 100 MHz were observed in high-frequency permeameter measurement. Finally, thermal annealing was carried out at various temperatures. Uniaxial anisotropy was maintained up to 300 degrees C, while an enhancement of permeability (by 25%) was observed.
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Key words
Perpendicular magnetic anisotropy,Annealing,Permeability,Magnetic multilayers,Amorphous magnetic materials,Silicon,Magnetic hysteresis,CMOS compatible,high-frequency soft magnetic material,high permeability,inductor
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