Effect of barrier layer width on the optical and spectral properties of InAsP/ AlGaInP quantum dot lasers

The barrier layer thickness separating the dot-in-well structure in optoelectronic devices plays a crucial impact on the performance of these devices. Here, we report the effect of the barrier width in quantum dot (QD) laser. Three series of InAsP QD lasers were papered with different barrier widths (i.e., 8, 16, and 24 nm) of (AlGa)InP. The samples were prepared by MOVPE at 730 degrees C. Data of threshold current density, Jth giving a lower Jth for 8 nm barrier width sample and it becomes more temperature dependency evident by a low value of characteristic temperature, To approximate to 77 k. Emission spectra of 2 mm long lasers showed a blue-shift by approximately 11 nm when the barrier width increased from 8 to 24 nm. The modal absorption study showed a decrease in the inhomogeneous broadening for 24 nm barrier width sample. Simulation results revealed an increase in the optical absorption cross-section, sigma o with increasing barrier width. These results showed that significant improvements in the spectral properties of the InAsP QD lasers can be made by altering the (AlGa)InP barrier width.