Preparation of high-purity gallium oxide via gallium hydrolysis

Gallium oxide (Ga2O3), a promising semiconductor material, has attracted significant attention in recent years. This study focuses on a method for rapidly obtaining high-purity Ga2O3 through the one-step hydrolysis of gallium in an alkaline environment to address the challenges of complex experimental equipment and the highpressure condition of the traditional method. Uniformly dispersed rod-like GaOOH with a length of 2 mu m is prepared using a 5 mM polyvinylpyrrolidone solution. Additionally, Ga2O3 (500 degrees C alpha-Ga2O3 and 800 degrees C beta-Ga2O3) with different crystal forms is prepared by calcinating GaOOH at different temperatures. Compared with conventional methods, this approach offers a fast, safe, and cheap process for preparing high-purity Ga2O3.