Synergistic approach for enhancement of optical and electrical dielectric properties of size-tunable Cu doped NiO semiconductor quantum nanoflakes

In this article, isolated percolative Cu-doped NiO nanoflakes were manufactured through an advanced chemical synthesis method. The powder materials were sintered at 300 degrees C, 350 degrees C, and 400 degrees C to pursue the effectuation of phase and band gap adaptation from X-ray diffractometry, Fourier Transform Infrared spectroscopy, and Raman spectroscopy. The optical study for nanoparticles was effectuated by Ultraviolet-Visible spectrophotometer, and Photoluminescence spectroscopy confirm the quantum confinement effect. Morphology and elemental conformation were surveyed by Field Emission Scanning Electron Microscope, High-Resolution Transmission Electron Microscope, and Energy Dispersive X-ray depiction and confirmed the nanostructure of our sample. The frequency and temperature dependence dielectric constant, loss tangent (tan delta), ac conductivity (sigma ac); and the Nyquist plot were also premeditated. Finally, the larger ionic radii and higher valency of the dopant yields a subsequently high dielectric constant and ac conductivity along with low loss paving the empowerment of Cuimpregnated NiO nanoparticles in optoelectrical automation.