Radiation hardness evaluation of -Ga₂O₃ thin-film devices under swift heavy ion irradiation

The ultra-wide band gap (similar to 4.9 eV) and extremely large breakdown field strength (similar to 8 MV/cm) enable epsilon-Ga2O3 as an ideal materials candidate for high-performance power devices and solar-blind photodetectors. For the purpose of deep space applications explorations, comprehensive study of the effects of particle irradiation on the lattice stability and electronic properties of epsilon-Ga2O3 are of pivotal importance. In this work, leveraging a unique Ta radiation source, we interrogate the radiation hardness of epsilon-Ga2O3 thin films after 1907 MeV Ta swift heavy ion (SHI) irradiation. Detailed characterizations of the structural and optical properties show that the morphology and lattice structure are disrupted, with an increase of the band gap. Additionally, X-ray photoelectron spectroscopy experiments combining density functional theory calculations corroborate extrinsic flux-induced high concentration defects in the film, which lead to truncated photo-response performance of the device. However, even upon irradiation with a fluence of 5 x 10(10) cm(-2), the overall performance of the device remains robust and substantial. This outstanding radiation hardness of epsilon-Ga2O3 thin films rationalizes their potential usage for space applications.