Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications

•Typical programming schemes in charge-trap transistors (CTT) result in hot-carrier-induced transport degradation evidenced by measurements in 22 nm FDSOI devices.•Quasi-ballistic transport theory of nanoscale transistors establishes a correlation between interface tap buildup and reduction in effective mobility.•In contrast to threshold voltage shifts, trap-induced degradation in mobility does not recover with voltage pulsing.•Mobility and transport degradation must be considered for accurate implementation of dot-product and vector–matrix-multiplication on CTT arrays.