High responsivity and fast response 8×8 β -Ga 2 O 3 solar-blind ultraviolet imaging photodetector array

In this work, an 8×8 Ga 2 O 3 solar-blind ultraviolet photodetector array is introduced for image sensing application. The 2-in wafer-scaled Ga 2 O 3 thin film was grown by metalorganic chemical vapor deposition technique; and the photodetector array was fabricated through ultraviolet photolithography, lift-off, and electron-beam evaporation. In addition to the high solar-blind/visible rejection ratio of 10 4 , every photodetector cell in the array has high performance and fast response speed, such as responsivity of 49.4 A W −1 , specific detectivity of 6.8 × 10 14 Jones, external quantum efficiency of 1.9 × 10 4 %, linear dynamic range of 117.8 dB, and response time of 41 ms, respectively, indicating the high photo-response performance of the photodetector. Moreover, the photodetector array displayed uniform responsivity with a standard deviation of ∼6%, and presented a sensing image of low chromatic aberration, owing to the high resolution of the photodetector array. In a word, this work may contribute to developing Ga 2 O 3 -based optoelectronic device applications.