Interaction of SiC with Al 2 O 3 −( t + m )ZrO 2 (Y 2 O 3 ) Oxide Composition

We employed contact alloying in the range 1000–1860°С to study the reaction specifics between SiC and Al 2 O 3 −( t + m )ZrO 2 (Y 2 O 3 ) oxide composition. Real-time experiments with photographic recording of the changing size and shape of the Al 2 O 3 −( t + m )ZrO 2 (Y 2 O 3 ) sample on a SiC ceramic substrate showed that Al 2 O 3 −( t + m )ZrO 2 (Y 2 O 3 ) compositions react with the silicon carbide substrate in the range 1720–1860°С to melt and penetrate into (impregnate) the substrate. X-ray powder diffraction patterns were measured for samples taken from the contact area of the oxide composition with SiC directly on the substrate and in a chipped-off <1-mm-deep near-surface layer. ZrС, Al 2 Y 4 O 9 , and Al 3.21 Si 0.47 were formed in the contact area via redox reactions involving oxide melt, in addition to 6H-SiC, Si and Al 2 O 3 , t -ZrO 2 phases, which are the initial components of the substrate and oxide composition, respectively.