Symmetries in Transmission Electron Microscopy images of semiconductor nanostructures with strain
2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)(2023)
Abstract
Transmission electron microscopy is often used to image semiconductor nanostructures with strain. The resulting images exhibit symmetries, the source of which is not always known. We prove mathematically that the intensities are invariant under specific transformations, which allows us to distinguish between symmetries of the imaging process itself and symmetries of the inclusion.
MoreTranslated text
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined