Synthesis and Characterization of Silicon-Carbon Powder and Its Resistance to Electron Irradiation

The issue of crystallization of silicon oxide at low temperatures is a topical issue for the electronics of the future. Organosilicon oligomers and polymers are "ideal" sources for obtaining ultrapure silicon ceramics and silicon nanoparticles. This paper presents the results of the synthesis of highly dispersed silicon-carbon powder from an organohydrosiloxane oligomer and the method for increasing its crystallinity at low temperatures. The diffraction pattern of the resulting powder corresponds to the amorphous-crystalline state of the components in this material, as evidenced by two intense and broadened amorphous halos in the region of Bragg angles 2 theta = 7-11 degrees and 18-25 degrees. The resulting silicon-carbon powder was subjected to electron irradiation (E = 10 MeV; D = 10(6)-10(7) Gy). This paper presents the data on the changes in powder properties via IR-Fourier spectroscopy, X-ray phase analysis, and scanning electron microscopy. Irradiation with fast electrons with an absorbed dose of 10(6) Gy leads to a slight crystallization of the amorphous SiO2 phase. An increase in the absorbed dose of fast electrons from D = 10(6) to D = 10(7) Gy leads to the opposite effect. An amorphization of silica is observed. This study showed the possibility of the crystallization of a silicon-carbon powder without a significant increase in temperature, acting only with electron irradiation. It is necessary to continue further research on expanding the boundaries of the optimal doses of absorbed radiation from fast electrons in order to achieve the maximum effect of the crystallization of silicon-carbon powder.