A full high-definition quantum dot light-emitting diode-on-silicon microdisplay

We report a 0.39-in. quantum dot light-emitting diode (QLED) microdisplay with full high-definition (FHD, 1920 x 1080) resolution by integrating a red top-emitting QLED on a complementary metal-oxide-semiconductor (CMOS) backplane. By optimizing the microcavity structure and constructing a suitable energy-level structure for the QLED devices, the performance of the large-area (4.9 x 8.7 mm2) top-emitting device with normal structure reached 13,936 cd/m2 of brightness at 5-V bias with 13.3% external quantum efficiency (EQE). Notably, the optimal device showed a low turn-on voltage of 1.7 V, which matched well the voltage output of the CMOS backplane. Our work demonstrates the great promise of QLED microdisplays for applications in head-mounted augmented reality/virtual reality (AR/VR). To improve the performance of top-emitting QLEDs, the optical architecture of device was optimized by simulation and experiment. The normal structured QLED performed better to match the output voltage of CMOS compared to the inverted device. A 0.39-in. QLED microdisplay with FHD (1920 x 1080) resolution was fabricated by integrating a red TEQLED on a CMOS backplane.image