A 13 × W, 94 mK Resolution, CMOS PD ΔΣ M Temperature-to-Digital Converter With Power-Gating Technique

ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC)(2023)

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摘要
This paper presents a CMOS phase-domain delta-sigma modulator $(\mathrm{P}\mathrm{D}\Delta\Sigma \mathrm{M})$ that digitizes temperaturedependent phase shifts resulting from driving a poly-phase filter (PPF) at a constant frequency. Closed-loop architecture with a power-gating technique is applied to improve linearity and power efficiency. The design is implemented in a $0.18\mu \mathrm{m}$ CMOS process. The temperature sensor has an inaccuracy of ± 2.2°C(3σ) from -40°C to $85\circ \mathrm{C}$. Furthermore, the design achieves a resolution of 94 mK at 1 $\mathrm{k}\mathrm{S}\mathrm{a}/\mathrm{s}$, while the chip area is 0.19 $\mathrm{m}\mathrm{m}^{2}$. The power consumption is 13 $\mu \mathrm{W}$, resulting in an inaccuracy FoM of 161.1 $\mathrm{n}\mathrm{J}\cdot\%^{2}.$
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关键词
CMOS,phase domain,delta-sigma modulator,temperature sensor
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