SEE Test Results for SRAM and Register Files Compiled on 22nm Fully-Depleted-Silicon-on-Insulator (22FDX)

The results of single event effect (SEE) experiments on fully-depleted silicon-on-insulator (FDSOI) static random- access memory (SRAM). Testing was conducted using several different ion species from the 88-inch cyclotron at the Lawrence Berkeley National Laboratory (LBNL). The SRAM and register file structures showed sensitivity to the lowest tested LET (~3 MeV-cm ² /mg), and an approximate saturated cross section around $1\mathrm{x}10^{-10}$ cm2, More importantly, the SRAM performance was consistent with earlier tests and extended results by adding register file blocks which utilized full assist structures.