Consistent and Repeatable Transistor Level TID Transistor Array Measurement

Ryan Melendez, Leonardo Martinez,Lawrence T. Clark,Cliff S. YoungScioritino,Steven M. Guertin,Jean Yang-Scharlotta

2023 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2023 NSREC)（2023）

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摘要

We present 22 nm FDSOI transistor total ionizing dose (TID) induced threshold voltage $(\mathrm{V}_{\mathrm{t}})$ shifts measured on a packaged array test structure. Results demonstrate high current fidelity and $\mathbf{V}_{\mathrm{t}}$ vs. dose consistency and repeatability.

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