Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

Masaki Takahashi,Zhongchao Sun,Jannick Kjaer Jorgensen,Szymon Michal Beczkowski,Stig Munk-Nielsen,Asger Bjorn Jorgensen

2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE（2023）

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摘要

Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.

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关键词

Finite-element method,Thermal behavior,Medium voltage,SiC MOSFET,Modeling

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