Dead Time Volt-Second Compensation of Converters Enabled by 10 kV SiC MOSFETs

2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE(2023)

引用 0|浏览3
暂无评分
摘要
This paper highlights the increased importance of volt-second compensating converter non-linearities such as dead time for wide bandgap semiconductor devices utilized in medium voltage converters. The increasing voltage level of medium voltage converters impose a penalty to the volt-second compensation required to compensate for the voltage error caused by dead time. A thorough analysis and experimental results of switching events are utilized to present the required volt-second compensation for a 10 kV silicon-carbide MOSFET power module.
更多
查看译文
关键词
Silicon Carbide (SiC),MOSFET,Wide bandgap,Medium voltage,Dead time,Compensation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要