Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory

In this study, we demonstrate a fully CMOS compatible co-integration of Gate-All-Around (GAA) stacked-NanoSheet (NS) transistors with HfO 2 -based OxRAM cells for high-density embedded memory. For the first time, we integrate resistive memory cells in the MEOL self-aligned drain contacts of vertically stacked-NS transistors. We demonstrate the feasibility of optimizing the OxRAM bipolar switching characteristics in 3D vertical drain contacts with doped Si bottom electrodes. Pulsed cycling operation, observed on forming-free devices, show an endurance up to 1M cycles at scaled GAA-NS dimensions (L G =20nm and W=30nm).