22FDX^? Device Optimization for mmW PA

New extended drain field effect transistors, EDNFET and EDPWNFET, with technology and layout optimization for mmW PA on 22FDX technology is carefully carried out in this work. Optimization through work-function engineering, gate resistance routing at PA array, and drain extension through multiple contact to poly pitch (CPP) results in 20% reliability enhancement while not sacrifice on-resistance (Ron). 2 Stage PA consist of optimized device as output stage shows a 2x improvement in output power (Pout) reaching 23dBm as well as 3% PAE enhancement at 28Ghz. To our knowledge, this is the best result we see on the 22FDX((R)) technology at 28Ghz