Impact of Non-Uniform Ferroelectric Dielectric Phase and Metal Grains on the Performance of MFM Capacitor and Ferroelectric FETs
2023 IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, ISAF(2023)
摘要
Reliability and yield are major concerns for memory devices. The random variability sources have a significant impact on the reliability of the memory window (MW) in ferroelectric FETs. In this work, through a comprehensive study, we analysed the impact of the non-uniform dielectric phase and metal grains on the coercive field of Metal-Ferro-Metal capacitor and on the performance of FeFETs. We found 1) Metal grains randomization (MGR) causes polarization non-uniformity throughout the volume of the ferroelectric layer; 2) Smaller metal thickness (Tmetal) causes larger polarization non-uniformity due to work function discreteness. It leads to higher device variability and results in memory window closure; 3) Larger the metal grain size (MGS) higher will be the device variation; 4) The combination of higher the DE phase along with the higher DE grain size and larger the MGS with Tmetal causes worst-case reliability issues.
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关键词
Dielectric,Fully Depleted Silicon on Insulator,Ferroelectric,Reliability
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