Band mixing in the quantum anomalous Hall regime of twisted semiconductor bilayers
arxiv(2023)
摘要
Remarkable recent experiments have observed fractional quantum anomalous Hall
(FQAH) effects at zero field and unusually high temperatures in twisted
semiconductor bilayer tMoTe_2. Intriguing observations in these experiments
such as the absence of integer Hall effects at twist angles where a fractional
Hall effect is observed, do however remain unexplained. The experimental phase
diagram as a function of twist angle remains to be established. By
comprehensive numerical study, we show that band mixing has large qualitative
and quantitative effects on the energetics of competing states and their energy
gaps throughout the twist angle range θ≤ 4^∘. This lays the
ground for the detailed realistic study of a rich variety of strongly
correlated twisted semiconductor multilayers and an understanding of the phase
diagram of these fascinating systems.
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