Interfacial Properties of the SnO/κ-Ga2O3 P-N Heterojunction: A Case of Subsurface Doping Density Reduction Via Thermal Treatment in Κ-Ga2o3.
ACS APPLIED MATERIALS & INTERFACES（2023）
Key words
SnO/kappa-Ga2O3 planar diode,capacitance-voltage (C-V) measurement,dual-frequency method,ultrawideband gap semiconductors,Synopsys Sentaurus-TCAD device modeling
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