Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth”
IEEE Journal of Quantum Electronics(2023)
Abstract
In the above article
[1]
, the affiliations were written as: The authors are with the State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China (e-mail: mayingjie@mail.sitp.ac.cn; lixue@mail.sitp.ac.cn).
MoreTranslated text
Key words
surface leakage behaviors,photodetectors,mesa,depth”
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