Algorithm based high composition-controlled growths of GeSn on GaAs (001) via molecular beam epitaxy

The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve pseudomorph GeSn compositions near 11% before partial relaxation of the structure and a continued gradient to 16 % GeSn. Using algorithmic-based control and calibration, the ability to consistently and easily grow GeSn compositions above 20 % will likely become very possible. In this report, we use X-ray diffraction and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm.