Effects of strain-tunable valleys on charge transport in bismuth
arxiv(2023)
摘要
The manipulation of the valley degree of freedom can boost the technological
development of novel functional devices based on valleytronics. The current
mainstream platform for valleytronics is to produce a monolayer with inversion
asymmetry, in which the strain-band engineering through the substrates can
serve to improve the performance of valley-based devices. However, pinpointing
the effective role of strain is inevitable for the precise design of the
desired valley structure. Here, we demonstrate the charge transport under
continuously controllable external strain for bulk bismuth crystals with three
equivalent electron valleys and one hole valley. The strain response of
resistance, namely elastoresistance, exhibits the evolutions in both
antisymmetric and symmetric channels with decreasing temperature. The
elastoresistance behaviors mainly reflect the significant changes in valley
density depending on the symmetry of induced strain, evidenced by our
strain-dependent quantum oscillation measurements and first-principle band
calculations under strain. These facts suggest the successful tune and
evaluation of the valley populations through strain-dependent charge valley
transport.
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