Doping of large amount tetravalent Ge ions into Fe₂O₃ structure and experimental results on modified structural, optical and electronic properties

We report the doping of high concentration of tetravalent Ge4+ ions (5 mol % for x = 0.05-30 mol % for x = 0.30) at the Fe3+ sites of Fe2-xGexO3 system by chemical coprecipitation route. The charge state of Fe and Ge ions has been modified into lower values, in addition to their normal +3 and + 4 states, to stabilize the rhombohedral phase of hematite (alpha-Fe2O3) structure. X-ray photoelectron spectra and optical band gap measurements indicated a combination of ionic and covalence character of metal-oxygen bonds as an effect of Ge doping in the hematite structure. The Ge doped hematite samples have exhibited semiconductor properties with band gap of 1.50-4.70 eV and remarkably enhanced electrical conductivity (sigma - 10-4 S/m) in comparison to alpha-Fe2O3 (10-11 S/m). The results confirmed the strategy of enhancing electrical conductivity in hematite structure by doping of tetravalent cations. The thermo-conductivity measurements using warming and cooling modes showed highly irreversible feature at higher temperatures. Some of the samples indicated metal-like state at lower temperature, in addition to semiconductor state at higher temperatures. It has been understood that combination of ionic and covalence character of the metal-oxygen bonds has played an important role in modifying the semiconductor properties in Ge doped Fe2O3 system.