Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI
IEEE Transactions on Device and Materials Reliability(2023)
摘要
We studied the impact of gate and drain stress biases combination on IGZO based TFTs degradation targeting hot carrier regime. We show that typical signatures of this mechanism (e.g., saturation current degradation and SS increase) are not visible even at high drain biases, while a gate bias dependence only (BTI) is present in most of the degradation data. We also identify an unexpected gate-length dependence of BTI, for which different extrinsic causes are investigated.
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关键词
Degradation, Stress, Logic gates, Temperature measurement, Thin film transistors, Materials reliability, Contact resistance, IGZO, BTI, hot carrier degradation, reliability
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