The influence of manufacturing modes on the electrical and energy parameters of graphene/p-CdTe Schottky diodes

The paper investigated the electrical properties of graphene/p-CdTe structures, which were distinguished by different durations of graphene films application on p-CdTe crystalline substrates: t1 = 5 min, t2 = 10 min and t3 = 15 min. The temperature of the substrates did not exceed TS = 523 K. The formation of graphene layers was confirmed by the study of Raman scattering spectra in the frequency range of 1000–3250 cm−1, in which the G and 2D bands with features characteristic of few-layer graphene appear. The established dependence of the electrical properties of the studied surface-barrier structures of graphene/p-CdTe on the duration of graphene films sputtering is well explained by the thermally stimulated change in the equilibrium characteristics of the base material and the formation of a near-surface layer with an increased concentration of acceptor-type defects (VCd), which is caused by the processes of the substrate components evaporation at its heating.