High resistive buffer layers by Fermi level engineering

JOURNAL OF APPLIED PHYSICS(2023)

引用 0|浏览4
暂无评分
摘要
An efficient carrier compensation mechanism in semiconductor layers by Fermi-level engineering is demonstrated using the modulation-doping of a deep acceptor and a shallow donor. The punch-through of the depletion region across the whole stack of modulation-doped layers shifts the Fermi level closer toward the midgap position, resulting in the compensation of residual background free carriers. The method represents an alternative to achieve semi-insulating properties in semiconductor materials where a suitable deep acceptor or donor state at the midgap position is not available. We demonstrate the applicability of the concept with a commercially important GaN case study using carbon (deep acceptor) and Si (shallow donor) doping. A strong enhancement of breakdown field strength and reduced charge pileup effects are observed due to the efficient pinning of the Fermi level.
更多
查看译文
关键词
high resistive buffer layers
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要