Demonstration of -Ga₂O₃ nonvolatile flash memory for oxide electronics

This report demonstrates an ultrawide bandgap beta-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial beta-Ga2O3 film had TiN as the floating gate (FG) and Al2O3 as tunneling and gate oxides. A memory window of > 4 V was obtained between the programmed and erased states of the device. The memory states showed negligible degradation in threshold voltage (V-TH) even after 5000 s, exhibiting excellent nonvolatility. Furthermore, the device showed a V-TH of similar to 0.3 V after applying a 17 V programming voltage pulse, indicating the potential of the electron trapping phenomenon in the FG to achieve enhancement-mode operation in beta-Ga2O3 transistors for high-power and logic applications. This study would provide insights for future oxide electronics integrating beta-Ga2O3 memory. (c) 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd