Transverse resistivity of acceptor graphite intercalation compounds

The temperature dependences of the transverse resistivity for acceptor intercalation compounds of different stages based on fine crystalline anisotropic graphite in the temperature range from 4.2 K up to 300 K are studied. The peculiarities of the transverse resistivity are analyzed in the terms of the Sugihara model, which assumes two mechanisms of conduction in the direction perpendicular to the graphite layers, namely the diffusive motion of the charge carriers along the graphite layers and the hopping conduction into the neighboring graphite layers. The possibility of the manifestation of quantum effects of the charge carriers' weak localization and interaction in a low temperature transverse resistance is evaluated.