String-level compact modeling for dynamic operation and transient analysis of 3D charge trapping flash memory

In this article, we propose a string-level compact model, which is based on accurate and seamless channel electrostatic potential, for dynamic operation of 3D charge trapping flash (CTF) memory. First, we introduce a unit cell model for 3D CTF memory structure based on a conventional BSIM-CMG model using an extended netlist of equivalent circuits which describe the gate-all-around (GAA) structure composed of a metal gate, a blocking oxide, a charge trapping layer, and a tunneling oxide. Then, a string-level compact model is proposed, implying three advantages of inter-cell behaviors, seamless channel potential and process variation. To enhance the accuracy of the model behavior, extended model parameters are extracted showing good agreement with experimental data, such as I-V characteristics, program/erase speed, and incremental step pulse programming (ISPP). Furthermore, to predict channel electrostatic potential more precisely, we verify simulation program with integrated circuit emphasis (SPICE) simulation results of positively and negatively boosted channels comparing them with technology computer-aided design (TCAD) simulation results. Finally, we demonstrate that the proposed model can be efficiently applied to circuit simulation for analysis of the disturbance or failure mechanism and would equip the circuit designers and system architects with an effective tool for design optimization of 3D CTF memory devices.